2N6987 Tech Specifications

Category Transistors - Bipolar (BJT) - Arrays
Manufacturer Microsemi
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Factory Lead Time 12 Weeks
Contact Plating Lead, Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case 14-DIP (0.300, 7.62mm)
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 60V
Number of Elements 4 Elements
Operating Temperature -65°C~200°C TJ
Packaging Bulk
Published 2002
JESD-609 Code e0
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 14Terminations
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Max Power Dissipation 1.5W
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-XDIP-T14
Qualification Status Not Qualified
Configuration SINGLE
Power - Max 1.5W
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type 4 PNP (Quad)
Collector Emitter Voltage (VCEO) 1.6V
Max Collector Current 600mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 10V
Current - Collector Cutoff (Max) 10μA ICBO
JEDEC-95 Code TO-116
Vce Saturation (Max) @ Ib, Ic 1.6V @ 50mA, 500mA
Collector Base Voltage (VCBO) 60V
RoHS Status Non-RoHS Compliant
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