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2N6987 Tech Specifications
| Category | Transistors - Bipolar (BJT) - Arrays | |
| Manufacturer | Microsemi | |
| Lifecycle Status | IN PRODUCTION (Last Updated: 1 month ago) | |
| Factory Lead Time | 12 Weeks | |
| Contact Plating | Lead, Tin | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | 14-DIP (0.300, 7.62mm) | |
| Transistor Element Material | SILICON | |
| Collector-Emitter Breakdown Voltage | 60V | |
| Number of Elements | 4 Elements | |
| Operating Temperature | -65°C~200°C TJ | |
| Packaging | Bulk | |
| Published | 2002 | |
| JESD-609 Code | e0 | |
| Pbfree Code | no | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 14Terminations | |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Max Power Dissipation | 1.5W | |
| Terminal Position | DUAL | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| JESD-30 Code | R-XDIP-T14 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE | |
| Power - Max | 1.5W | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | PNP | |
| Transistor Type | 4 PNP (Quad) | |
| Collector Emitter Voltage (VCEO) | 1.6V | |
| Max Collector Current | 600mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA 10V | |
| Current - Collector Cutoff (Max) | 10μA ICBO | |
| JEDEC-95 Code | TO-116 | |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 50mA, 500mA | |
| Collector Base Voltage (VCBO) | 60V | |
| RoHS Status | Non-RoHS Compliant |
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2N6987 Documents
Download datasheets and manufacturer documentation for 2N6987
- Datasheets2N6987(U),2N6988
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