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APT150GN60B2G Tech Specifications

Category Transistors - IGBTs - Single
Manufacturer Microsemi
Factory Lead Time 24 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3 Variant
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Number of Elements 1 Element
Test Conditions 400V, 150A, 1 Ω, 15V
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 1999
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Terminal Finish TIN SILVER COPPER
Additional Feature LOW CONDUCTION LOSS, HIGH RELIABILITY
Max Power Dissipation 536W
Pin Count 3
JESD-30 Code R-PSFM-T3
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 536W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 220A
JEDEC-95 Code TO-247AD
Turn On Time 154 ns
Vce(on) (Max) @ Vge, Ic 1.85V @ 15V, 150A
Turn Off Time-Nom (toff) 575 ns
IGBT Type Trench Field Stop
Gate Charge 970nC
Current - Collector Pulsed (Icm) 450A
Td (on/off) @ 25°C 44ns/430ns
Switching Energy 8.81mJ (on), 4.295mJ (off)
Gate-Emitter Voltage-Max 30V
Gate-Emitter Thr Voltage-Max 6.5V
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
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