APT18M80B Tech Specifications

Category Transistors - FETs, MOSFETs - Single
Manufacturer Microsemi
Lifecycle Status IN PRODUCTION (Last Updated: 3 weeks ago)
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 19A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 500W Tc
Turn Off Delay Time 95 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series POWER MOS 8™
Published 1997
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature AVALANCHE RATED
Voltage - Rated DC 800V
Terminal Position SINGLE
Current Rating 18A
Pin Count 3
JESD-30 Code R-PSFM-T3
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power Dissipation 500W
Case Connection DRAIN
Turn On Delay Time 21 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 530m Ω @ 9A, 10V
Vgs(th) (Max) @ Id 5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 3760pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 120nC @ 10V
Rise Time 31ns
Vgs (Max) ±30V
Fall Time (Typ) 27 ns
Continuous Drain Current (ID) 19A
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.53Ohm
Pulsed Drain Current-Max (IDM) 70A
Avalanche Energy Rating (Eas) 795 mJ
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
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