APT25GP120BDQ1G Tech Specifications

Category Transistors - IGBTs - Single
Manufacturer Microsemi
Factory Lead Time 32 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Weight 38.000013g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 1.2kV
Collector-Emitter Saturation Voltage 3.3V
Number of Elements 1 Element
Test Conditions 600V, 25A, 5 Ω, 15V
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series POWER MOS 7®
Published 1999
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature LOW CONDUCTION LOSS
Voltage - Rated DC 1.2kV
Max Power Dissipation 417W
Current Rating 69A
Pin Count 3
JESD-30 Code R-PSFM-T3
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 69A
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 26 ns
Vce(on) (Max) @ Vge, Ic 3.9V @ 15V, 25A
Continuous Collector Current 69A
Turn Off Time-Nom (toff) 200 ns
IGBT Type PT
Gate Charge 110nC
Current - Collector Pulsed (Icm) 90A
Td (on/off) @ 25°C 12ns/70ns
Switching Energy 500μJ (on), 440μJ (off)
Gate-Emitter Voltage-Max 30V
Gate-Emitter Thr Voltage-Max 6V
Height 5.31mm
Length 21.46mm
Width 16.26mm
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
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