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- APT25GT120BRDQ2G
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APT25GT120BRDQ2G Tech Specifications
| Category | Transistors - IGBTs - Single | |
| Manufacturer | Microsemi | |
| Factory Lead Time | 29 Weeks | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-247-3 | |
| Weight | 38.000013g | |
| Transistor Element Material | SILICON | |
| Collector-Emitter Breakdown Voltage | 1.2kV | |
| Collector-Emitter Saturation Voltage | 3.2V | |
| Number of Elements | 1 Element | |
| Test Conditions | 800V, 25A, 5 Ω, 15V | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tube | |
| Series | Thunderbolt IGBT® | |
| Published | 1999 | |
| JESD-609 Code | e1 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) | |
| Voltage - Rated DC | 1.2kV | |
| Max Power Dissipation | 347W | |
| Current Rating | 54A | |
| Pin Count | 3 |
| JESD-30 Code | R-PSFM-T3 | |
| Element Configuration | Single | |
| Case Connection | COLLECTOR | |
| Input Type | Standard | |
| Transistor Application | POWER CONTROL | |
| Polarity/Channel Type | N-CHANNEL | |
| Collector Emitter Voltage (VCEO) | 1.2kV | |
| Max Collector Current | 54A | |
| Voltage - Collector Emitter Breakdown (Max) | 1200V | |
| Turn On Time | 41 ns | |
| Vce(on) (Max) @ Vge, Ic | 3.7V @ 15V, 25A | |
| Continuous Collector Current | 54A | |
| Turn Off Time-Nom (toff) | 186 ns | |
| IGBT Type | NPT | |
| Gate Charge | 170nC | |
| Current - Collector Pulsed (Icm) | 75A | |
| Td (on/off) @ 25°C | 14ns/150ns | |
| Switching Energy | 930μJ (on), 720μJ (off) | |
| Gate-Emitter Voltage-Max | 30V | |
| Gate-Emitter Thr Voltage-Max | 6.5V | |
| Height | 5.31mm | |
| Length | 21.46mm | |
| Width | 16.26mm | |
| Radiation Hardening | No | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |
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APT25GT120BRDQ2G Documents
Download datasheets and manufacturer documentation for APT25GT120BRDQ2G
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