Microsemi Corporation APT43M60B2 Single MOSFETs Transistors
45A
IN STOCK
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APT43M60B2 Tech Specifications
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | Microsemi | |
| Factory Lead Time | 19 Weeks | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-247-3 Variant | |
| Weight | 38.000013g | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 45A Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 780W Tc | |
| Turn Off Delay Time | 145 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tube | |
| Series | POWER MOS 8™ | |
| Published | 1997 | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| Terminal Finish | PURE MATTE TIN | |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY | |
| Voltage - Rated DC | 600V | |
| Terminal Position | SINGLE |
| Current Rating | 43A | |
| Pin Count | 3 | |
| JESD-30 Code | R-PSIP-T3 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 780W | |
| Case Connection | DRAIN | |
| Turn On Delay Time | 48 ns | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 150m Ω @ 21A, 10V | |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA | |
| Input Capacitance (Ciss) (Max) @ Vds | 8590pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 215nC @ 10V | |
| Rise Time | 55ns | |
| Vgs (Max) | ±30V | |
| Fall Time (Typ) | 44 ns | |
| Continuous Drain Current (ID) | 45A | |
| Gate to Source Voltage (Vgs) | 30V | |
| Drain to Source Breakdown Voltage | 600V | |
| Height | 5.31mm | |
| Length | 21.46mm | |
| Width | 16.26mm | |
| Radiation Hardening | No | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |
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APT43M60B2 Documents
Download datasheets and manufacturer documentation for APT43M60B2
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