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APT45GP120BG Tech Specifications

Category Transistors - IGBTs - Single
Manufacturer Microsemi
Factory Lead Time 23 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Weight 38.000013g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 1.2kV
Collector-Emitter Saturation Voltage 3.3V
Number of Elements 1 Element
Test Conditions 600V, 45A, 5 Ω, 15V
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series POWER MOS 7®
Published 1999
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Terminal Finish TIN SILVER COPPER
Additional Feature LOW CONDUCTION LOSS
Voltage - Rated DC 1.2kV
Max Power Dissipation 625W
Current Rating 100A
Pin Count 3
JESD-30 Code R-PSFM-T3
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 100A
JEDEC-95 Code TO-247AD
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 47 ns
Vce(on) (Max) @ Vge, Ic 3.9V @ 15V, 45A
Continuous Collector Current 100A
Turn Off Time-Nom (toff) 230 ns
IGBT Type PT
Gate Charge 185nC
Current - Collector Pulsed (Icm) 170A
Td (on/off) @ 25°C 18ns/102ns
Switching Energy 900μJ (on), 904μJ (off)
Height 5.31mm
Length 21.46mm
Width 16.26mm
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
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