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APT50GN120L2DQ2G Tech Specifications

Category Transistors - IGBTs - Single
Manufacturer Microsemi
Factory Lead Time 29 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Number of Pins 3Pins
Weight 10.6g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 1.2kV
Collector-Emitter Saturation Voltage 1.7V
Number of Elements 1 Element
Test Conditions 800V, 50A, 2.2 Ω, 15V
Turn Off Delay Time 320 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1999
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature HIGH RELIABILITY
Voltage - Rated DC 1.2kV
Max Power Dissipation 543W
Current Rating 134A
Pin Count 3
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 28 ns
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 134A
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 55 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 50A
Continuous Collector Current 134A
Turn Off Time-Nom (toff) 600 ns
IGBT Type NPT, Trench Field Stop
Gate Charge 315nC
Current - Collector Pulsed (Icm) 150A
Td (on/off) @ 25°C 28ns/320ns
Switching Energy 4495μJ (off)
Gate-Emitter Thr Voltage-Max 6.5V
Height 5.21mm
Length 26.49mm
Width 20.5mm
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
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