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APT75GN60LDQ3G Tech Specifications

Category Transistors - IGBTs - Single
Manufacturer Microsemi
Factory Lead Time 25 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Weight 10.6g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Collector-Emitter Saturation Voltage 1.45V
Number of Elements 1 Element
Test Conditions 400V, 75A, 1 Ω, 15V
Turn Off Delay Time 385 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 1999
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Terminal Finish TIN SILVER COPPER
Additional Feature HIGH RELIABILITY
Max Power Dissipation 536W
Pin Count 3
JESD-30 Code R-PSFM-T3
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 47 ns
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 155A
Turn On Time 95 ns
Vce(on) (Max) @ Vge, Ic 1.85V @ 15V, 75A
Continuous Collector Current 155A
Turn Off Time-Nom (toff) 485 ns
IGBT Type Trench Field Stop
Gate Charge 485nC
Current - Collector Pulsed (Icm) 225A
Td (on/off) @ 25°C 47ns/385ns
Switching Energy 2500μJ (on), 2140μJ (off)
Gate-Emitter Voltage-Max 30V
Gate-Emitter Thr Voltage-Max 6.5V
Height 5.21mm
Length 26.49mm
Width 20.5mm
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
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