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APT75GP120B2G Tech Specifications

Category Transistors - IGBTs - Single
Manufacturer Microsemi
Factory Lead Time 23 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3 Variant
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 1.2kV
Collector-Emitter Saturation Voltage 3.3V
Number of Elements 1 Element
Test Conditions 600V, 75A, 5 Ω, 15V
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series POWER MOS 7®
Published 1999
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Terminal Finish TIN SILVER COPPER
Additional Feature ULTRA FAST, LOW CONDUCTION LOSS
Voltage - Rated DC 1.2kV
Max Power Dissipation 1.042kW
Current Rating 100A
Pin Count 3
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 1042W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 100A
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 60 ns
Vce(on) (Max) @ Vge, Ic 3.9V @ 15V, 75A
Continuous Collector Current 100A
Turn Off Time-Nom (toff) 359 ns
IGBT Type PT
Gate Charge 320nC
Current - Collector Pulsed (Icm) 300A
Td (on/off) @ 25°C 20ns/163ns
Switching Energy 1620μJ (on), 2500μJ (off)
Height 5.31mm
Length 21.46mm
Width 16.26mm
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
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