Microsemi Corporation JANTXV2N3811U Arrays BJT Transistors
60V 50mA
IN STOCK
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JANTXV2N3811U Tech Specifications
| Category | Transistors - Bipolar (BJT) - Arrays | |
| Manufacturer | Microsemi | |
| Mount | Surface Mount, Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-78-6 Metal Can | |
| Number of Pins | 6Pins | |
| Transistor Element Material | SILICON | |
| Collector-Emitter Breakdown Voltage | 60V | |
| Number of Elements | 2 Elements | |
| Operating Temperature | -65°C~200°C TJ | |
| Packaging | Bulk | |
| Series | Military, MIL-PRF-19500/336 | |
| Published | 2007 | |
| JESD-609 Code | e0 | |
| Pbfree Code | no | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 8Terminations |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Max Power Dissipation | 350mW | |
| Terminal Position | BOTTOM | |
| Terminal Form | WIRE | |
| JESD-30 Code | O-MBCY-W8 | |
| Polarity | PNP | |
| Power Dissipation | 350mW | |
| Transistor Type | 2 PNP (Dual) | |
| Collector Emitter Voltage (VCEO) | 60V | |
| Max Collector Current | 50mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 1mA 5V | |
| Current - Collector Cutoff (Max) | 10μA ICBO | |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 100μA, 1mA | |
| Collector Base Voltage (VCBO) | 60V | |
| Emitter Base Voltage (VEBO) | 5V | |
| Radiation Hardening | No | |
| RoHS Status | Non-RoHS Compliant |
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JANTXV2N3811U Documents
Download datasheets and manufacturer documentation for JANTXV2N3811U
- Datasheets2N3810(L,U), 2N3811(L,U) JANTXV2N3811U-Microsemi-datasheet-11593380.pdf
- PCN Obsolescence/ EOL2N3811 Devices 19/Jun/2015
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