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JANTXV2N6989 Tech Specifications

Category Transistors - Bipolar (BJT) - Arrays
Manufacturer Microsemi
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Factory Lead Time 23 Weeks
Contact Plating Lead, Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case 14-DIP (0.300, 7.62mm)
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 50V
Number of Elements 4 Elements
Operating Temperature -65°C~200°C TJ
Packaging Bulk
Series Military, MIL-PRF-19500/559
Published 2002
JESD-609 Code e0
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 14Terminations
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
HTS Code 8541.29.00.95
Max Power Dissipation 1.5W
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 14
Reference Standard MIL-19500/559F
JESD-30 Code R-PDIP-T14
Qualification Status Qualified
Configuration SEPARATE, 4 ELEMENTS
Power - Max 1.5W
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type 4 NPN (Quad)
Collector Emitter Voltage (VCEO) 1V
Max Collector Current 800mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 10V
Current - Collector Cutoff (Max) 10μA ICBO
JEDEC-95 Code TO-116
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA
Collector Base Voltage (VCBO) 75V
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
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