Microwave Technology Inc. MWT-LN300 RF MOSFETs Transistors
26GHz 10dB -
IN STOCK
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MWT-LN300 Tech Specifications
| Category | Transistors - FETs, MOSFETs - RF | |
| Manufacturer | Microwave Technology | |
| Package / Case | Die | |
| Supplier Device Package | Die | |
| Mfr | Microwave Technology Inc. | |
| Package | Case | |
| Product Status | Active | |
| Voltage Rated | 4 V | |
| Vds - Drain-Source Breakdown Voltage | 4 V | |
| Transistor Polarity | - | |
| Maximum Operating Temperature | + 150 C | |
| Minimum Operating Temperature | - | |
| Mounting Styles | - | |
| Rds On - Drain-Source Resistance | - |
| Id - Continuous Drain Current | 120 mA | |
| Series | - | |
| Current Rating (Amps) | - | |
| Technology | GaAs | |
| Frequency | 26GHz | |
| Operating Frequency | 26 GHz | |
| Output Power | 16 dBm | |
| Current - Test | 25 mA | |
| Transistor Type | pHEMT FET | |
| Gain | 10dB | |
| Power - Output | - | |
| Noise Figure | 0.6dB | |
| Voltage - Test | 2.5 V |
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