Microwave Technology Inc. MWT-LN600 RF MOSFETs Transistors
20dBm 12dB 26GHz
IN STOCK
Min. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please sendRFQ, we will respond immediately
MWT-LN600 Tech Specifications
| Category | Transistors - FETs, MOSFETs - RF | |
| Manufacturer | Microwave Technology | |
| Package / Case | Die | |
| Supplier Device Package | Die | |
| Voltage Rated | 5.5 V | |
| Product Status | Active | |
| Package | Case | |
| Mfr | Microwave Technology Inc. | |
| Vds - Drain-Source Breakdown Voltage | 4.5 V | |
| Transistor Polarity | - | |
| Maximum Operating Temperature | + 150 C | |
| Minimum Operating Temperature | - | |
| Mounting Styles | - | |
| Rds On - Drain-Source Resistance | - |
| Id - Continuous Drain Current | 175 mA | |
| Series | - | |
| Current Rating (Amps) | - | |
| Technology | GaAs | |
| Frequency | 26GHz | |
| Operating Frequency | 26 GHz | |
| Output Power | 20 dBm | |
| Current - Test | 100 mA | |
| Transistor Type | pHEMT FET | |
| Gain | 12dB | |
| Power - Output | 20dBm | |
| Noise Figure | 0.5dB @ 12GHz | |
| Voltage - Test | 3 V |
Select at least one checkbox above to show similar products in this category.
Index :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ