Mitsubishi Electric QM30HA-H Single BJT Transistors
75 30 A 250 W
IN STOCK
: 300
Min. : 1
Mult. : 1
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QM30HA-H Tech Specifications
| Category | Transistors - Bipolar (BJT) - Single | |
| Manufacturer | Mitsubishi | |
| Surface Mount | NO | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | MITSUBISHI ELECTRIC CORP | |
| Package Description | FLANGE MOUNT, R-PUFM-X3 | |
| Number of Elements | 1 Element | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| ECCN Code | EAR99 |
| Additional Feature | BUILT IN BIAS RESISTOR | |
| Terminal Position | UPPER | |
| Terminal Form | UNSPECIFIED | |
| Reach Compliance Code | unknown | |
| JESD-30 Code | R-PUFM-X3 | |
| Qualification Status | Not Qualified | |
| Configuration | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | |
| Polarity/Channel Type | NPN | |
| Power Dissipation-Max (Abs) | 250 W | |
| Collector Current-Max (IC) | 30 A | |
| DC Current Gain-Min (hFE) | 75 | |
| VCEsat-Max | 2 V | |
| Fall Time-Max (tf) | 3000 ns |
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QM30HA-H Documents
Download datasheets and manufacturer documentation for QM30HA-H
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