Mitsubishi Electric RT1N144C Single BJT Transistors
0.1 A 50 50 V
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: 64382
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RT1N144C Tech Specifications
| Category | Transistors - Bipolar (BJT) - Single | |
| Manufacturer | Mitsubishi | |
| Surface Mount | YES | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | MITSUBISHI ELECTRIC CORP | |
| Package Description | SMALL OUTLINE, R-PDSO-G3 | |
| Number of Elements | 1 Element | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Transition Frequency-Nom (fT) | 200 MHz |
| ECCN Code | EAR99 | |
| Additional Feature | BUILT-IN BIAS RESISTOR RATIO IS 4.7 | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Reach Compliance Code | unknown | |
| JESD-30 Code | R-PDSO-G3 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN RESISTOR | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | NPN | |
| JEDEC-95 Code | TO-236 | |
| Collector Current-Max (IC) | 0.1 A | |
| DC Current Gain-Min (hFE) | 50 | |
| Collector-Emitter Voltage-Max | 50 V |
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RT1N144C Documents
Download datasheets and manufacturer documentation for RT1N144C
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