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NHUMB2X Tech Specifications

Category Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Manufacturer Nexperia
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package 6-TSSOP
Mfr Nexperia USA Inc.
Product Status Active
Current-Collector (Ic) (Max) 100mA
Base Product Number NHUMB2
MSL MSL 1 - Unlimited
Qualification AEC-Q101
Transistor Polarity Dual PNP
Emitter- Base Voltage VEBO 10 V
Pd - Power Dissipation 350 mW
Maximum Operating Temperature + 150 C
Collector-Emitter Saturation Voltage 100 mV
Minimum Operating Temperature - 55 C
Factory Pack QuantityFactory Pack Quantity 3000
Mounting Styles SMD/SMT
Gain Bandwidth Product fT 150 MHz
Part # Aliases 934661426115
Manufacturer Nexperia
Brand Nexperia
Maximum DC Collector Current 100 mA
RoHS Details
Collector- Emitter Voltage VCEO Max 80 V
Series Automotive, AEC-Q101
Packaging MouseReel
Subcategory Transistors
Configuration Dual
Power Dissipation 350mW
Power - Max 350mW
Product Type BJTs - Bipolar Transistors
Transistor Type 2 PNP - Pre-Biased (Dual)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 5V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 100mV @ 500μA, 10mA
Voltage - Collector Emitter Breakdown (Max) 80V
Frequency - Transition 150MHz
Collector Base Voltage (VCBO) 80 V
Resistor - Base (R1) 47kOhms
Continuous Collector Current 100mA
Resistor - Emitter Base (R2) 47kOhms
Product Category Bipolar Transistors - BJT
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