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PBLS4003D,115 Tech Specifications

Category Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Manufacturer Nexperia
Factory Lead Time 4 Weeks
Package / Case SC-74, SOT-457
Mounting Type Surface Mount
Mount Surface Mount
Number of Pins 6Pins
Collector-Emitter Breakdown Voltage 40V
Current-Collector (Ic) (Max) 100mA 700mA
Number of Elements 2 Elements
Published 2009
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Additional Feature BUILT IN BIAS RESISTOR RATIO 1
Max Power Dissipation 600mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number PBLS4003
Pin Count 6
Polarity NPN, PNP
Element Configuration Dual
Transistor Application SWITCHING
Transistor Type 1 NPN Pre-Biased, 1 PNP
Collector Emitter Voltage (VCEO) 150mV
Max Collector Current 700mA
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 5mA 5V / 300 @ 100mA 5V
Current - Collector Cutoff (Max) 1μA 100nA
Vce Saturation (Max) @ Ib, Ic 150mV @ 500μA, 10mA / 310mV @ 100mA, 1A
Voltage - Collector Emitter Breakdown (Max) 50V 40V
Transition Frequency 150MHz
Max Breakdown Voltage 40V
Frequency - Transition 150MHz
Resistor - Base (R1) 10k Ω
Resistor - Emitter Base (R2) 10k Ω
RoHS Status ROHS3 Compliant
Radiation Hardening No
Lead Free Lead Free
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