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PDTC114ET,215 Tech Specifications

Category Transistors - Bipolar (BJT) - Single, Pre-Biased
Manufacturer Nexperia
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Saturation Voltage 150mV
Number of Elements 1 Element
hFEMin 30
Packaging Tape & Reel (TR)
Published 2002
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number PDTC114
Pin Count 3
Qualification Status Not Qualified
Polarity NPN
Configuration SINGLE WITH BUILT-IN RESISTOR
Power Dissipation 250mW
Transistor Application SWITCHING
Transistor Type NPN - Pre-Biased
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 5mA 5V
Current - Collector Cutoff (Max) 1μA
Vce Saturation (Max) @ Ib, Ic 150mV @ 500μA, 10mA
Transition Frequency 230MHz
Frequency - Transition 230MHz
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 10V
Max Junction Temperature (Tj) 150°C
Resistor - Base (R1) 10 k Ω
Resistor - Emitter Base (R2) 10 k Ω
Ambient Temperature Range High 150°C
Height 1.1mm
RoHS Status ROHS3 Compliant
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