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- PDTC123JT,215
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PDTC123JT,215 Tech Specifications
Category | Transistors - Bipolar (BJT) - Single, Pre-Biased | |
Manufacturer | Nexperia | |
Factory Lead Time | 4 Weeks | |
Mounting Type | Surface Mount | |
Package / Case | TO-236-3, SC-59, SOT-23-3 | |
Surface Mount | YES | |
Number of Pins | 3Pins | |
Transistor Element Material | SILICON | |
Current-Collector (Ic) (Max) | 100mA | |
Number of Elements | 1 Element | |
Operating Temperature (Max.) | 150°C | |
Packaging | Tape & Reel (TR) | |
Published | 2003 | |
JESD-609 Code | e3 | |
Part Status | Active | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Number of Terminations | 3Terminations | |
ECCN Code | EAR99 | |
Terminal Finish | Tin (Sn) | |
HTS Code | 8541.21.00.95 |
Terminal Position | DUAL | |
Terminal Form | GULL WING | |
Peak Reflow Temperature (Cel) | 260 | |
Time@Peak Reflow Temperature-Max (s) | 40 | |
Base Part Number | PDTC123 | |
Pin Count | 3 | |
Qualification Status | Not Qualified | |
Polarity | NPN | |
Configuration | SINGLE WITH BUILT-IN RESISTOR | |
Power - Max | 250mW | |
Transistor Application | SWITCHING | |
Transistor Type | NPN - Pre-Biased | |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA 5V | |
Current - Collector Cutoff (Max) | 1μA | |
Vce Saturation (Max) @ Ib, Ic | 100mV @ 250μA, 5mA | |
Voltage - Collector Emitter Breakdown (Max) | 50V | |
Resistor - Base (R1) | 2.2 k Ω | |
Resistor - Emitter Base (R2) | 47 k Ω | |
Power Dissipation Ambient-Max | 0.25W | |
RoHS Status | ROHS3 Compliant |
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PDTC123JT,215 Documents
Download datasheets and manufacturer documentation for PDTC123JT,215
- DatasheetsPDTC123J Series PDTC123JT%2C215-Nexperia-datasheet-84041975.pdf PDTC123JT%2C215-Nexperia-datasheet-12516617.pdf PDTC123JT%2C215-NXP-datasheet-54668.pdf PDTC123JT%2C215-Philips-datasheet-11774898.pdf
- PCN Design/SpecificationResin Hardener 02/Jul/2013
- PCN Assembly/OriginMult Devices 09/Jun/2018
- PCN PackagingCarrier Tapes 31/Aug/2016 Logo 10/Dec/2016
- RohsStatementNXP-Semiconductors-company-12.pdf
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