Nexperia USA Inc. PMDPB30XN,115 MOSFETs Transistors Arrays
490mW 20V
IN STOCK
: 9000
Min. : 1
Mult. : 1
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PMDPB30XN,115 Tech Specifications
| Category | Transistors - FETs, MOSFETs - Arrays | |
| Manufacturer | Nexperia | |
| Factory Lead Time | 8 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 6-UDFN Exposed Pad | |
| Number of Pins | 8Pins | |
| Supplier Device Package | 6-HUSON-EP (2x2) | |
| Current - Continuous Drain (Id) @ 25℃ | 4A | |
| Turn Off Delay Time | 4 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2012 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Max Operating Temperature | 150°C | |
| Min Operating Temperature | -55°C | |
| Max Power Dissipation | 490mW | |
| Number of Channels | 2Channels |
| Element Configuration | Dual | |
| Turn On Delay Time | 40 ns | |
| Power - Max | 490mW | |
| FET Type | 2 N-Channel (Dual) | |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 3A, 4.5V | |
| Vgs(th) (Max) @ Id | 900mV @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 660pF @ 10V | |
| Gate Charge (Qg) (Max) @ Vgs | 21.7nC @ 4.5V | |
| Rise Time | 15ns | |
| Drain to Source Voltage (Vdss) | 20V | |
| Fall Time (Typ) | 16 ns | |
| Continuous Drain Current (ID) | 4A | |
| Gate to Source Voltage (Vgs) | 650mV | |
| Input Capacitance | 660pF | |
| FET Feature | Logic Level Gate | |
| Drain to Source Resistance | 32mOhm | |
| Rds On Max | 40 mΩ | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant |
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PMDPB30XN,115 Documents
Download datasheets and manufacturer documentation for PMDPB30XN,115
- PCN PackagingPack/Label Update 30/Nov/2016 Lighter Reels 02/Jan/2014
- DatasheetsPMDPB30XN
- RohsStatementNXP-Semiconductors-company-12.pdf
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