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PMEG6030EVPX Tech Specifications
| Category | Diodes - Rectifiers - Single | |
| Manufacturer | Nexperia | |
| Factory Lead Time | 4 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | SOD-128 | |
| Diode Element Material | SILICON | |
| Number of Elements | 1 Element | |
| Packaging | Tape & Reel (TR) | |
| Published | 2013 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 2Terminations | |
| Max Operating Temperature | 175°C | |
| Min Operating Temperature | -55°C | |
| Applications | EFFICIENCY | |
| Max Power Dissipation | 2.5W | |
| Terminal Position | DUAL | |
| Terminal Form | FLAT | |
| Base Part Number | PMEG6030 | |
| Pin Count | 2 | |
| Reference Standard | AEC-Q101; IEC-60134 | |
| JESD-30 Code | R-PDSO-F2 | |
| Element Configuration | Single |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Diode Type | Schottky | |
| Current - Reverse Leakage @ Vr | 400μA @ 60V | |
| Voltage - Forward (Vf) (Max) @ If | 475mV @ 3A | |
| Forward Current | 3A | |
| Operating Temperature - Junction | 175°C Max | |
| Output Current-Max | 4.2A | |
| Forward Voltage | 420mV | |
| Max Reverse Voltage (DC) | 60V | |
| Average Rectified Current | 3A | |
| Number of Phases | 1Phase | |
| Reverse Recovery Time | 20 ns | |
| Peak Reverse Current | 400μA | |
| Max Repetitive Reverse Voltage (Vrrm) | 60V | |
| Capacitance @ Vr, F | 575pF @ 1V 1MHz | |
| Peak Non-Repetitive Surge Current | 70A | |
| Reverse Voltage | 60V | |
| Max Forward Surge Current (Ifsm) | 70A | |
| Max Junction Temperature (Tj) | 175°C | |
| Ambient Temperature Range High | 175°C | |
| Height | 1.1mm | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
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PMEG6030EVPX Documents
Download datasheets and manufacturer documentation for PMEG6030EVPX
- PCN PackagingLogo 10/Dec/2016 Label Chg 12/Mar/2017
- DatasheetsPMEG6030EVP
- ReachStatementNXP-Semiconductors-company-13.pdf
- PCN Assembly/OriginWafer Size Change
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