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PUMD13,115 Tech Specifications

Category Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Manufacturer Nexperia
Factory Lead Time 4 Weeks
Surface Mount YES
Package / Case 6-TSSOP, SC-88, SOT-363
Mounting Type Surface Mount
Number of Pins 6Pins
Transistor Element Material SILICON
hFEMin 100
Number of Elements 2 Elements
Collector-Emitter Saturation Voltage 100mV
Published 2005
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 10
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MD13
Pin Count 6
Qualification Status Not Qualified
Polarity NPN, PNP
Power Dissipation 300mW
Transistor Application SWITCHING
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA 5V
Current - Collector Cutoff (Max) 1μA
Vce Saturation (Max) @ Ib, Ic 100mV @ 250μA, 5mA
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 5V
Max Junction Temperature (Tj) 150°C
Resistor - Base (R1) 4.7k Ω
Resistor - Emitter Base (R2) 47k Ω
Ambient Temperature Range High 150°C
Height 1.1mm
RoHS Status ROHS3 Compliant
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PUMD13,115 Documents

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