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PUMD2,115 Tech Specifications

Category Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Manufacturer Nexperia
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Surface Mount YES
Number of Pins 6Pins
Transistor Element Material SILICON
Current-Collector (Ic) (Max) 100mA
Number of Elements 2 Elements
Packaging Tape & Reel (TR)
Published 2001
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature BUILT IN BIAS RESISTANCE RATIO IS 1
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number MD2
Pin Count 6
Polarity NPN, PNP
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Power - Max 300mW
Transistor Application SWITCHING
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 5mA 5V
Current - Collector Cutoff (Max) 1μA
Vce Saturation (Max) @ Ib, Ic 150mV @ 500μA, 10mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 22k Ω
Resistor - Emitter Base (R2) 22k Ω
RoHS Status ROHS3 Compliant
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PUMD2,115 Documents

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