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PUMH9,115 Tech Specifications

Category Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Manufacturer Nexperia
Factory Lead Time 4 Weeks
Surface Mount YES
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6Pins
Transistor Element Material SILICON
Current-Collector (Ic) (Max) 100mA
Number of Elements 2 Elements
Published 2002
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 4.7
Terminal Form GULL WING
Base Part Number P*MH9
Pin Count 6
Polarity NPN
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Power - Max 300mW
Transistor Application SWITCHING
Transistor Type 2 NPN - Pre-Biased (Dual)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 5mA 5V
Current - Collector Cutoff (Max) 1μA
Vce Saturation (Max) @ Ib, Ic 100mV @ 250μA, 5mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 10k Ω
Resistor - Emitter Base (R2) 47k Ω
RoHS Status ROHS3 Compliant
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PUMH9,115 Documents

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