NTE Electronics, Inc NTE16003 RF BJT Transistors
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NTE16003 Tech Specifications
| Category | Transistors - Bipolar (BJT) - RF | |
| Manufacturer | NTE ELECT | |
| Mounting Type | Stud Mount | |
| Package / Case | TO-212MA, TO-210AB, TO-60-4, Stud | |
| Surface Mount | NO | |
| Supplier Device Package | TO-60 | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Mfr | NTE Electronics, Inc | |
| Package | Bag | |
| Product Status | Active | |
| Current-Collector (Ic) (Max) | 1.5A | |
| Manufacturer Part Number | NTE16003 | |
| Manufacturer | NTE Electronics | |
| Package Description | POST/STUD MOUNT, O-MUPM-P3 | |
| Package Style | POST/STUD MOUNT | |
| Package Body Material | METAL | |
| Transition Frequency-Nom (fT) | 500 MHz | |
| Package Shape | ROUND | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | NTE ELECTRONICS INC | |
| Risk Rank | 2.02 | |
| Series | - | |
| Operating Temperature | -65°C ~ 200°C (TJ) | |
| ECCN Code | EAR99 |
| Subcategory | BIP RF Small Signal | |
| Terminal Position | UPPER | |
| Terminal Form | PIN/PEG | |
| Reach Compliance Code | unknown | |
| JESD-30 Code | O-MUPM-P3 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE | |
| Case Connection | ISOLATED | |
| Power - Max | 11.6W | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | NPN | |
| Transistor Type | NPN | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - | |
| JEDEC-95 Code | TO-60 | |
| Gain | - | |
| Voltage - Collector Emitter Breakdown (Max) | 40V | |
| Frequency - Transition | 500MHz | |
| Power Dissipation-Max (Abs) | 12 W | |
| Collector Current-Max (IC) | 1.5 A | |
| DC Current Gain-Min (hFE) | 10 | |
| Collector-Emitter Voltage-Max | 40 V | |
| Highest Frequency Band | ULTRA HIGH FREQUENCY BAND | |
| Collector-Base Capacitance-Max | 10 pF | |
| Noise Figure (dB Typ @ f) | - | |
| Power Dissipation Ambient-Max | 11.6 W |
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