NTE Electronics, Inc. NTE2114 Memory ICs
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NTE2114 Tech Specifications
| Category | Memory | |
| Manufacturer | NTE ELECT | |
| Surface Mount | NO | |
| Number of Terminals | 18Terminals | |
| Manufacturer Part Number | NTE2114 | |
| Manufacturer | NTE Electronics | |
| Clock Freq | Not Required(MHz) | |
| Operating Temperature Classification | Commercial | |
| Package Type | PDIP | |
| Operating Temp Range | 0C to 70C | |
| Number of Words | 1KWord | |
| Address Bus | 10(b) | |
| Number of I/O Lines | 4I/O Lines | |
| Operating Supply Voltage (Max) | 5.5(V) | |
| Operating Supply Voltage (Typ) | 5(V) | |
| Rad Hardened | No | |
| Operating Supply Voltage (Min) | 4.5(V) | |
| Mounting | Through Hole | |
| Package Description | DIP, DIP18,.3 | |
| Package Style | IN-LINE | |
| Number of Words Code | 1000Words Codes | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Equivalence Code | DIP18,.3 | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Access Time-Max | 300 ns | |
| Operating Temperature-Max | 70 °C | |
| Rohs Code | Yes | |
| Supply Voltage-Nom (Vsup) | 5 V | |
| Package Code | DIP | |
| Package Shape | RECTANGULAR | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | NTE ELECTRONICS INC | |
| Risk Rank | 2.34 | |
| Part Package Code | DIP | |
| JESD-609 Code | e0 | |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| HTS Code | 8542.32.00.41 | |
| Subcategory | SRAMs | |
| Technology | NMOS | |
| Terminal Position | DUAL | |
| Terminal Form | THROUGH-HOLE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Number of Functions | 1Function | |
| Terminal Pitch | 2.54 mm | |
| Reach Compliance Code | unknown | |
| Pin Count | 18 | |
| JESD-30 Code | R-PDIP-T18 | |
| Qualification Status | Not Qualified | |
| Supply Voltage-Max (Vsup) | 5.25 V | |
| Power Supplies | 5 V | |
| Temperature Grade | COMMERCIAL | |
| Supply Voltage-Min (Vsup) | 4.75 V | |
| Number of Ports | 1Port | |
| Operating Mode | ASYNCHRONOUS | |
| Supply Current-Max | 0.1 mA | |
| Access Time | 300 | |
| Architecture | Not Required | |
| Organization | 1KX4 | |
| Output Characteristics | 3-STATE | |
| Memory Width | 4 | |
| Density | 4096(Bit) | |
| Standby Current-Max | 0.1 A | |
| Memory Density | 4096 bit | |
| Parallel/Serial | PARALLEL | |
| I/O Type | COMMON | |
| Sync/Async | Asynchronous | |
| Word Size | 4(b) | |
| Memory IC Type | STANDARD SRAM | |
| Standby Voltage-Min | 5 V | |
| Supply Current | 100 |
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