NTE Electronics, Inc NTE2370 Pre-Biased BJT Transistors 200 mW 50 V

Manufacturer : NTE Electronics, Inc

Mfr. Part # : NTE2370

Elecinsight Part # : 1780-366-NTE2370

Package : TO-226-3, TO-92-3 Short Body

RoHS : RoHS Compliant

Datasheet :

Description : Power - Max: 200 mW, Current - Collector Cutoff (Max): 500nA, Voltage - Collector Emitter Breakdown (Max): 50 V

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Min. : 1 Mult. : 1

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NTE2370 brand manufacturers: NTE Electronics, Inc, Elecinsight stock, NTE2370 reference price.NTE Electronics, Inc. NTE2370 parameters, NTE2370 Datasheet PDF and pin diagram description download.You can use the NTE2370 Transistors - Bipolar (BJT) - Single, Pre-Biased, DSP Datesheet PDF, find NTE2370 pin diagram and circuit diagram and usage method of function,NTE2370 electronics tutorials.You can download from the Elecinsight.

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Category	Transistors - Bipolar (BJT) - Single, Pre-Biased
Manufacturer	NTE ELECT
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3 Short Body
Supplier Device Package	TO-92S
Mfr	NTE Electronics, Inc
Package	Bag
Product Status	Active
Current-Collector (Ic) (Max)	100 mA
Manufacturer Part Number	NTE2370
Manufacturer	NTE Electronics

RoHS	Compliant
Series	-
Power - Max	200 mW
Transistor Type	PNP - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 10mA, 5V
Current - Collector Cutoff (Max)	500nA
Vce Saturation (Max) @ Ib, Ic	300mV @ 250μA, 5mA
Voltage - Collector Emitter Breakdown (Max)	50 V
Frequency - Transition	200 MHz
Resistor - Base (R1)	4.7 kOhms
Resistor - Emitter Base (R2)	4.7 kOhms

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NTE Electronics, Inc NTE2370 Pre-Biased BJT Transistors 200 mW 50 V

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NTE Electronics, Inc NTE2370 Pre-Biased BJT Transistors 200 mW 50 V