NTE Electronics, Inc. NTE2980 Single MOSFETs Transistors
31 A
IN STOCK
: 767
Min. : 1
Mult. : 1
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NTE2980 Tech Specifications
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | NTE ELECT | |
| Surface Mount | NO | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Manufacturer Part Number | NTE2980 | |
| Manufacturer | NTE Electronics | |
| Package Description | IN-LINE, R-PSIP-T3 | |
| Package Style | IN-LINE | |
| Package Body Material | PLASTIC/EPOXY | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Operating Temperature-Max | 150 °C | |
| Rohs Code | Yes | |
| Package Shape | RECTANGULAR | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | NTE ELECTRONICS INC | |
| Risk Rank | 5.74 | |
| Drain Current-Max (ID) | 7.7 A |
| ECCN Code | EAR99 | |
| Subcategory | FET General Purpose Power | |
| Terminal Position | SINGLE | |
| Terminal Form | THROUGH-HOLE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | unknown | |
| JESD-30 Code | R-PSIP-T3 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | N-CHANNEL | |
| Drain Current-Max (Abs) (ID) | 7.7 A | |
| Drain-source On Resistance-Max | 0.2 Ω | |
| Pulsed Drain Current-Max (IDM) | 31 A | |
| DS Breakdown Voltage-Min | 60 V | |
| Avalanche Energy Rating (Eas) | 47 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 25 W |
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