NTE Electronics, Inc NTE55MCP RF BJT Transistors
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NTE55MCP Tech Specifications
| Category | Transistors - Bipolar (BJT) - RF | |
| Manufacturer | NTE ELECT | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 | |
| Supplier Device Package | TO-220 | |
| Mfr | NTE Electronics, Inc | |
| Package | Bag | |
| Product Status | Active | |
| Current-Collector (Ic) (Max) | 8A | |
| Manufacturer Part Number | NTE55MCP |
| Manufacturer | NTE Electronics | |
| Series | - | |
| Operating Temperature | -65°C ~ 150°C (TJ) | |
| Power - Max | 2W | |
| Transistor Type | PNP | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 2A, 2V | |
| Gain | - | |
| Voltage - Collector Emitter Breakdown (Max) | 150V | |
| Frequency - Transition | 30MHz | |
| Noise Figure (dB Typ @ f) | - |
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