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NTE5711 Tech Specifications
Category | Thyristors - SCRs - Modules | |
Manufacturer | NTE ELECT | |
Package / Case | Module | |
Mounting Type | Chassis Mount | |
Surface Mount | NO | |
Number of Terminals | 5Terminals | |
Voltage-Off State | 1.2 kV | |
Number of SCRs/Diodes | 1 SCR, 1 DiodeSCRs/Diode | |
Product Status | Active | |
Package | Bag | |
Mfr | NTE Electronics, Inc | |
Manufacturer Part Number | NTE5711 | |
Manufacturer | NTE Electronics | |
Package Description | FLANGE MOUNT, R-XUFM-X5 | |
Package Style | FLANGE MOUNT | |
Package Body Material | UNSPECIFIED | |
Reflow Temperature-Max (s) | NOT SPECIFIED | |
Operating Temperature-Max | 125 °C | |
Rohs Code | Yes | |
Package Shape | RECTANGULAR | |
Number of Elements | 1 Element | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | NTE ELECTRONICS INC | |
Risk Rank | 5.66 | |
Operating Temperature | -40°C ~ 125°C (TJ) | |
Series | - | |
HTS Code | 8541.30.00.80 |
Subcategory | Silicon Controlled Rectifiers | |
Terminal Position | UPPER | |
Terminal Form | UNSPECIFIED | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Reach Compliance Code | unknown | |
JESD-30 Code | R-XUFM-X5 | |
Qualification Status | Not Qualified | |
Configuration | SINGLE WITH BUILT-IN SERIES DIODE | |
Case Connection | ISOLATED | |
Trigger Device Type | SCR | |
Voltage - Gate Trigger (Vgt) (Max) | 3 V | |
Current - Non Rep. Surge 50, 60Hz (Itsm) | 1500A @ 60Hz | |
Current - Gate Trigger (Igt) (Max) | 150 mA | |
On-state Current-Max | 65000 A | |
Structure | Series Connection - SCR/Diode | |
Repetitive Peak Off-state Voltage | 1200 V | |
Current - On State (It (AV)) (Max) | 55 A | |
Non-Repetitive Pk On-state Cur | 1500 A | |
Critical Rate of Rise of Off-State Voltage-Min | 400 V/us | |
Repetitive Peak Reverse Voltage | 1200 V | |
RMS On-state Current-Max | 86.35 A | |
Holding Current-Max | 200 mA | |
DC Gate Trigger Current-Max | 150 mA | |
Desc. of Screw Terminals | 0 | |
Desc. of Quick-Connects | 0 | |
DC Gate Trigger Voltage-Max | 1.4 V | |
Circuit Commutated Turn-off Time-Nom | 120 µs |
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