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PBSS4230PAN115 Tech Specifications

Category Transistors - Bipolar (BJT) - Arrays
Manufacturer NXP
Mounting Type Surface Mount
Package / Case 6-UFDFN Exposed Pad
Supplier Device Package 6-HUSON (2x2)
Package Bulk
Current-Collector (Ic) (Max) 2A
Mfr NXP Semiconductors
Product Status Active
Base Product Number PBSS4230
Operating Temperature 150°C (TJ)
Series -
Power - Max 510mW
Transistor Type -
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 1A, 2V
Current - Collector Cutoff (Max) 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic 290mV @ 200mA, 2A
Voltage - Collector Emitter Breakdown (Max) 30V
Frequency - Transition 120MHz
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