NXP Semiconductors PMBTA63 Single BJT Transistors
0.5 A 10000
IN STOCK
Min. : 1
Mult. : 1
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PMBTA63 Tech Specifications
| Category | Transistors - Bipolar (BJT) - Single | |
| Manufacturer | pSemi | |
| Surface Mount | YES | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Package Description | SMALL OUTLINE, R-PDSO-G3 | |
| Number of Elements | 1 Element | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE |
| Transition Frequency-Nom (fT) | 125 MHz | |
| ECCN Code | EAR99 | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Reach Compliance Code | unknown | |
| JESD-30 Code | R-PDSO-G3 | |
| Qualification Status | Not Qualified | |
| Configuration | DARLINGTON | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | PNP | |
| Collector Current-Max (IC) | 0.5 A | |
| DC Current Gain-Min (hFE) | 10000 | |
| VCEsat-Max | 1.5 V |
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PMBTA63 Documents
Download datasheets and manufacturer documentation for PMBTA63
- DatasheetsPHGLS01678-1.pdf
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