NXP Semiconductors PMEG3010AESB Bridge Rectifiers
RECTIFIER DIODE
IN STOCK
Min. : 1
Mult. : 1
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PMEG3010AESB Tech Specifications
| Category | Diodes - Bridge Rectifiers | |
| Manufacturer | pSemi | |
| Surface Mount | YES | |
| Diode Element Material | SILICON | |
| Number of Terminals | 2Terminals | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Package Description | DSN1006U-2, 2 PIN | |
| Number of Elements | 1 Element | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR |
| Package Style | CHIP CARRIER | |
| Power Dissipation (Max) | 0.525 W | |
| ECCN Code | EAR99 | |
| Terminal Position | BOTTOM | |
| Terminal Form | NO LEAD | |
| Reach Compliance Code | unknown | |
| Reference Standard | IEC-60134 | |
| JESD-30 Code | R-PBCC-N2 | |
| Configuration | SINGLE | |
| Diode Type | RECTIFIER DIODE | |
| Rep Pk Reverse Voltage-Max | 30 V | |
| Reverse Recovery Time-Max | 0.0035 μs |
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PMEG3010AESB Documents
Download datasheets and manufacturer documentation for PMEG3010AESB
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