NXP USA Inc. 2N7002PW Single MOSFETs Transistors
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2N7002PW Tech Specifications
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | NXP | |
| Surface Mount | YES | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Package Description | SMALL OUTLINE, R-PDSO-G3 | |
| Package Style | SMALL OUTLINE | |
| Moisture Sensitivity Levels | 1 | |
| Package Body Material | PLASTIC/EPOXY | |
| Operating Temperature-Min | -55 °C | |
| Reflow Temperature-Max (s) | 30 | |
| Operating Temperature-Max | 150 °C | |
| Rohs Code | Yes | |
| Manufacturer Part Number | 2N7002PW | |
| Package Shape | RECTANGULAR | |
| Manufacturer | Nexperia | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Not Recommended | |
| Samacsys Description | Trench MOSFET,N channel 60V,310mA SOT323 NXP 2N7002PW N-channel MOSFET Transistor, 0.31 A, 60 V, 3-Pin SOT-323 | |
| Ihs Manufacturer | NEXPERIA |
| Risk Rank | 5.15 | |
| Drain Current-Max (ID) | 0.31 A | |
| JESD-609 Code | e3 | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin (Sn) | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Reach Compliance Code | compliant | |
| Reference Standard | AEC-Q101; IEC-60134 | |
| JESD-30 Code | R-PDSO-G3 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | N-CHANNEL | |
| Drain-source On Resistance-Max | 1.6 Ω | |
| DS Breakdown Voltage-Min | 60 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
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