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BAP50-03,115 Tech Specifications

Category Diodes - RF
Manufacturer NXP
Factory Lead Time 8 Weeks
Package / Case SC-76, SOD-323
Surface Mount YES
Diode Element Material SILICON
Number of Elements 1 Element
Power Dissipation (Max) 500mW
Operating Temperature -65°C~150°C TJ
Packaging Tape & Reel (TR)
Published 1999
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
Terminal Finish Tin (Sn)
HTS Code 8541.10.00.70
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BAP50
Pin Count 2
JESD-30 Code R-PDSO-G2
Qualification Status Not Qualified
Diode Type PIN - Single
Capacitance @ Vr, F 0.35pF @ 5V 1MHz
Voltage - Peak Reverse (Max) 50V
Breakdown Voltage-Min 50V
Reverse Test Voltage 1V
Diode Capacitance-Nom 0.55pF
Resistance @ If, F 5Ohm @ 10mA 100MHz
Diode Capacitance-Max 0.55pF
Diode Res Test Current 0.5mA
Diode Res Test Frequency 100MHz
Diode Forward Resistance-Max 5Ohm
RoHS Status ROHS3 Compliant
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BAP50-03,115 Documents

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