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BAP50-05,215 Tech Specifications

Category Diodes - RF
Manufacturer NXP
Factory Lead Time 8 Weeks
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Diode Element Material SILICON
Number of Elements 2 Elements
Power Dissipation (Max) 250mW
Operating Temperature -65°C~150°C TJ
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Terminal Finish Tin (Sn)
HTS Code 8541.10.00.70
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BAP50-05
Pin Count 3
JESD-30 Code R-PDSO-G3
Qualification Status Not Qualified
Configuration COMMON CATHODE, 2 ELEMENTS
Diode Type PIN - 1 Pair Common Cathode
Capacitance @ Vr, F 0.5pF @ 5V 1MHz
Voltage - Peak Reverse (Max) 50V
Breakdown Voltage-Min 50V
Reverse Test Voltage 1V
Diode Capacitance-Nom 0.6pF
Resistance @ If, F 5Ohm @ 10mA 100MHz
Diode Capacitance-Max 0.6pF
Diode Res Test Current 0.5mA
Diode Res Test Frequency 100MHz
Diode Forward Resistance-Max 40Ohm
RoHS Status ROHS3 Compliant
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