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BAP51-06W,115 Tech Specifications

Category Diodes - RF
Manufacturer NXP
Factory Lead Time 13 Weeks
Package / Case SC-70, SOT-323
Surface Mount YES
Number of Elements 2 Elements
Power Dissipation (Max) 240mW
Operating Temperature -65°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Base Part Number BAP51-06
Pin Count 3
Configuration COMMON ANODE, 2 ELEMENTS
Diode Type PIN - 1 Pair Common Anode
Capacitance @ Vr, F 0.35pF @ 5V 1MHz
Voltage - Peak Reverse (Max) 50V
Breakdown Voltage-Min 50V
Source Url Status Check Date 2013-06-14 00:00:00
Diode Capacitance-Nom 0.4pF
Resistance @ If, F 2.5Ohm @ 10mA 100MHz
Minority Carrier Lifetime-Nom 0.55 µs
Diode Res Test Current 0.5mA
Diode Res Test Frequency 100MHz
Diode Forward Resistance-Max 9Ohm
RoHS Status ROHS3 Compliant
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BAP51-06W,115 Documents

Download datasheets and manufacturer documentation for   BAP51-06W,115

BAP51-06W,115 brand manufacturers: NXP USA Inc., Elecinsight stock, BAP51-06W,115 reference price.NXP USA Inc.. BAP51-06W,115 parameters, BAP51-06W,115 Datasheet PDF and pin diagram description download.You can use the BAP51-06W,115 Diodes - RF, DSP Datesheet PDF, find BAP51-06W,115 pin diagram and circuit diagram and usage method of function,BAP51-06W,115 electronics tutorials.You can download from the Elecinsight.