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BAP65-02,115 Tech Specifications

Category Diodes - RF
Manufacturer NXP
Factory Lead Time 13 Weeks
Package / Case SC-79, SOD-523
Surface Mount YES
Diode Element Material SILICON
Number of Elements 1 Element
Power Dissipation (Max) 715mW
Operating Temperature -65°C~150°C TJ
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
Terminal Finish Tin (Sn)
Applications ATTENUATOR; SWITCHING
Additional Feature HIGH VOLTAGE
HTS Code 8541.10.00.70
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BAP65
Pin Count 2
JESD-30 Code R-PDSO-F2
Qualification Status Not Qualified
Diode Type PIN - Single
Capacitance @ Vr, F 0.375pF @ 20V 1MHz
Voltage - Peak Reverse (Max) 30V
Breakdown Voltage-Min 30V
Diode Capacitance-Nom 0.65pF
Resistance @ If, F 350mOhm @ 100mA 100MHz
Diode Capacitance-Max 0.9pF
Minority Carrier Lifetime-Nom 0.17 µs
Diode Res Test Current 5mA
Diode Res Test Frequency 100MHz
Diode Forward Resistance-Max 0.9Ohm
RoHS Status ROHS3 Compliant
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BAP65-02,115 Documents

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