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BFT92W,115 Tech Specifications

Category Transistors - Bipolar (BJT) - RF
Manufacturer NXP
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Surface Mount YES
Transistor Element Material SILICON
Current-Collector (Ic) (Max) 25mA
Number of Elements 1 Element
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 1995
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature HIGH RELIABILITY
HTS Code 8541.21.00.75
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BFT92
Pin Count 3
JESD-30 Code R-PDSO-G3
Qualification Status Not Qualified
Configuration SINGLE
Power - Max 300mW
Transistor Application AMPLIFIER
Polarity/Channel Type PNP
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 15mA 10V
Voltage - Collector Emitter Breakdown (Max) 15V
Transition Frequency 4000MHz
Frequency - Transition 4GHz
Power Dissipation-Max (Abs) 0.3W
Highest Frequency Band L B
Noise Figure (dB Typ @ f) 2.5dB ~ 3dB @ 500MHz ~ 1GHz
Power Dissipation Ambient-Max 0.3W
RoHS Status ROHS3 Compliant
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