NXP USA Inc. BFU590QX RF BJT Transistors
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BFU590QX Tech Specifications
| Category | Transistors - Bipolar (BJT) - RF | |
| Manufacturer | NXP | |
| Factory Lead Time | 13 Weeks | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-243AA | |
| Surface Mount | YES | |
| Transistor Element Material | SILICON | |
| Current-Collector (Ic) (Max) | 200mA | |
| Number of Elements | 1 Element | |
| Operating Temperature | -40°C~150°C TJ | |
| Packaging | Cut Tape (CT) | |
| Published | 2011 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| Terminal Position | SINGLE | |
| Terminal Form | FLAT | |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Base Part Number | BFU590 | |
| Pin Count | 3 | |
| Reference Standard | AEC-Q101; IEC-60134 | |
| JESD-30 Code | R-PSSO-F3 | |
| Configuration | SINGLE | |
| Case Connection | COLLECTOR | |
| Power - Max | 2W | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | NPN | |
| Transistor Type | NPN | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 80mA 8V | |
| Gain | 6.5dB | |
| Voltage - Collector Emitter Breakdown (Max) | 12V | |
| Transition Frequency | 8000MHz | |
| Frequency - Transition | 8GHz | |
| Highest Frequency Band | L B | |
| RoHS Status | ROHS3 Compliant |
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BFU590QX Documents
Download datasheets and manufacturer documentation for BFU590QX
- DatasheetsBFU590Q
- Environmental InformationNXP RoHS3 Cert
- PCN Assembly/OriginMFG Name Change Nexperia 5/Mar/2017
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