NXP USA Inc. BFU730LXZ RF BJT Transistors
IN STOCK
: 2002
Min. : 1
Mult. : 1
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BFU730LXZ Tech Specifications
| Category | Transistors - Bipolar (BJT) - RF | |
| Manufacturer | NXP | |
| Factory Lead Time | 13 Weeks | |
| Mounting Type | Surface Mount | |
| Package / Case | 3-XFDFN | |
| Current-Collector (Ic) (Max) | 30mA | |
| Packaging | Tape & Reel (TR) | |
| Published | 2010 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Base Part Number | BFU730 | |
| Pin Count | 3 | |
| Power - Max | 160mW | |
| Transistor Type | NPN | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 205 @ 2mA 3V | |
| Gain | 15.8dB | |
| Voltage - Collector Emitter Breakdown (Max) | 3V | |
| Frequency - Transition | 53GHz | |
| Noise Figure (dB Typ @ f) | 0.75dB @ 6GHz | |
| RoHS Status | ROHS3 Compliant |
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