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BLT50,115 Tech Specifications

Category Transistors - Bipolar (BJT) - RF
Manufacturer NXP
Factory Lead Time 16 Weeks
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Surface Mount YES
Transistor Element Material SILICON
Current-Collector (Ic) (Max) 500mA
Number of Elements 1 Element
Operating Temperature 175°C TJ
Packaging Tape & Reel (TR)
Published 1998
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
HTS Code 8541.29.00.75
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number BLT50
Pin Count 4
JESD-30 Code R-PDSO-G4
Qualification Status Not Qualified
Configuration SINGLE
Case Connection COLLECTOR
Power - Max 2W
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 300mA 5V
Voltage - Collector Emitter Breakdown (Max) 10V
Frequency - Transition 470MHz
Power Dissipation-Max (Abs) 2W
Highest Frequency Band ULTRA HIGH FREQUENCY B
Collector-Base Capacitance-Max 6pF
Power Dissipation Ambient-Max 2W
Power Gain-Min (Gp) 10dB
RoHS Status ROHS3 Compliant
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