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MRFE6VP6300HR5 Tech Specifications

Category Transistors - FETs, MOSFETs - RF
Manufacturer NXP
Factory Lead Time 10 Weeks
Package / Case NI780-4
Surface Mount YES
Transistor Element Material SILICON
Number of Elements 2 Elements
Operating Temperature (Max.) 225°C
Voltage Rated 130V
Usage Level Military grade
Packaging Tape & Reel (TR)
Published 2006
Part Status Active
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 4Terminations
ECCN Code EAR99
HTS Code 8541.29.00.75
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Frequency 230MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MRFE6VP6300
JESD-30 Code R-CDFM-F4
Qualification Status Not Qualified
Configuration COMMON SOURCE, 2 ELEMENTS
Operating Mode ENHANCEMENT MODE
Case Connection SOURCE
Current - Test 100mA
Transistor Application AMPLIFIER
Polarity/Channel Type N-CHANNEL
Transistor Type LDMOS (Dual)
Gain 26.5dB
DS Breakdown Voltage-Min 130V
Power - Output 300W
FET Technology METAL-OXIDE SEMICONDUCTOR
Voltage - Test 50V
RoHS Status ROHS3 Compliant
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MRFE6VP6300HR5 Documents

Download datasheets and manufacturer documentation for   MRFE6VP6300HR5

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