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MW6S010GNR1 Tech Specifications

Category Transistors - FETs, MOSFETs - RF
Manufacturer NXP
Factory Lead Time 10 Weeks
Package / Case TO-270BA
Surface Mount YES
Transistor Element Material SILICON
Number of Elements 1 Element
Operating Temperature (Max.) 225°C
Voltage Rated 68V
Usage Level Military grade
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 2Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.75
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
Frequency 960MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MW6S010
JESD-30 Code R-PDSO-G2
Qualification Status Not Qualified
Configuration SINGLE
Operating Mode ENHANCEMENT MODE
Case Connection SOURCE
Current - Test 125mA
Transistor Application AMPLIFIER
Polarity/Channel Type N-CHANNEL
Transistor Type LDMOS
Gain 18dB
DS Breakdown Voltage-Min 68V
Power - Output 10W
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 61.4W
Voltage - Test 28V
RoHS Status ROHS3 Compliant
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MW6S010GNR1 Documents

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