NXP USA Inc. PDTB143EQA147 Pre-Biased BJT Transistors 325 mW 50 V

Manufacturer : NXP USA Inc.

Mfr. Part # : PDTB143EQA147

Elecinsight Part # : 1786-366-PDTB143EQA147

Package : 3-XDFN Exposed Pad

RoHS : RoHS Compliant

Datasheet :

Description : Power - Max: 325 mW, Current - Collector Cutoff (Max): 500nA, Voltage - Collector Emitter Breakdown (Max): 50 V

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PDTB143EQA147 brand manufacturers: NXP USA Inc., Elecinsight stock, PDTB143EQA147 reference price.NXP USA Inc.. PDTB143EQA147 parameters, PDTB143EQA147 Datasheet PDF and pin diagram description download.You can use the PDTB143EQA147 Transistors - Bipolar (BJT) - Single, Pre-Biased, DSP Datesheet PDF, find PDTB143EQA147 pin diagram and circuit diagram and usage method of function,PDTB143EQA147 electronics tutorials.You can download from the Elecinsight.

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Category	Transistors - Bipolar (BJT) - Single, Pre-Biased
Manufacturer	NXP
Package / Case	3-XDFN Exposed Pad
Mounting Type	Surface Mount
Supplier Device Package	DFN1010D-3
Current-Collector (Ic) (Max)	500 mA
Product Status	Active
Package	Bulk
Mfr	NXP USA Inc.
Series	PDTB143

Power - Max	325 mW
Transistor Type	PNP - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 50mA, 5V
Current - Collector Cutoff (Max)	500nA
Vce Saturation (Max) @ Ib, Ic	100mV @ 2.5mA, 50mA
Voltage - Collector Emitter Breakdown (Max)	50 V
Frequency - Transition	150 MHz
Resistor - Base (R1)	4.7 kOhms
Resistor - Emitter Base (R2)	4.7 kOhms

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NXP USA Inc. PDTB143EQA147 Pre-Biased BJT Transistors 325 mW 50 V

PDTB143EQA147 Tech Specifications

NXP USA Inc. PDTB143EQA147 Pre-Biased BJT Transistors 325 mW 50 V WISH LIST Compare

PDTB143EQA147 Tech Specifications

NXP USA Inc. PDTB143EQA147 Pre-Biased BJT Transistors 325 mW 50 V