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- PDTC114EK,115
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PDTC114EK,115 Tech Specifications
| Category | Transistors - Bipolar (BJT) - Single, Pre-Biased | |
| Manufacturer | NXP | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Surface Mount | YES | |
| Transistor Element Material | SILICON | |
| Current-Collector (Ic) (Max) | 100mA | |
| Number of Elements | 1 Element | |
| Packaging | Tape & Reel (TR) | |
| Published | 2004 | |
| JESD-609 Code | e3 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | TIN | |
| Additional Feature | BUILT-IN BIAS RESISTOR RATIO IS 1 | |
| HTS Code | 8541.21.00.95 | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Base Part Number | PDTC114 | |
| Pin Count | 3 | |
| JESD-30 Code | R-PDSO-G3 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN RESISTOR | |
| Power - Max | 250mW | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | NPN | |
| Transistor Type | NPN - Pre-Biased | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA 5V | |
| Current - Collector Cutoff (Max) | 1μA | |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500μA, 10mA | |
| Voltage - Collector Emitter Breakdown (Max) | 50V | |
| Power Dissipation-Max (Abs) | 0.25W | |
| Resistor - Base (R1) | 10 k Ω | |
| Resistor - Emitter Base (R2) | 10 k Ω | |
| RoHS Status | ROHS3 Compliant |
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PDTC114EK,115 Documents
Download datasheets and manufacturer documentation for PDTC114EK,115
- PCN Obsolescence/ EOLMultiple Devices 30/Jun/2009
- DatasheetsPDTC114E Series PDTC144E Series
- Environmental InformationNXP RoHS3 Cert
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