NXP USA Inc. PMBFJ309,215 JFETs Transistors
12mA @ 10V 50Ohm
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PMBFJ309,215 Tech Specifications
| Category | Transistors - JFETs | |
| Manufacturer | NXP | |
| Factory Lead Time | 8 Weeks | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Surface Mount | YES | |
| Transistor Element Material | SILICON | |
| Number of Elements | 1 Element | |
| Operating Temperature | 150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2001 | |
| JESD-609 Code | e3 | |
| Part Status | Not For New Designs | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| Terminal Finish | Tin (Sn) | |
| Additional Feature | LOW NOISE | |
| HTS Code | 8541.21.00.75 | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | MBFJ309 | |
| Pin Count | 3 | |
| JESD-30 Code | R-PDSO-G3 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE | |
| Operating Mode | DEPLETION MODE | |
| Power - Max | 250mW | |
| FET Type | N-Channel | |
| Transistor Application | AMPLIFIER | |
| Input Capacitance (Ciss) (Max) @ Vds | 5pF @ 10V | |
| JEDEC-95 Code | TO-236AB | |
| DS Breakdown Voltage-Min | 25V | |
| FET Technology | JUNCTION | |
| Power Dissipation-Max (Abs) | 0.25W | |
| Feedback Cap-Max (Crss) | 2.5 pF | |
| Highest Frequency Band | VERY HIGH FREQUENCY B | |
| Current - Drain (Idss) @ Vds (Vgs=0) | 12mA @ 10V | |
| Voltage - Cutoff (VGS off) @ Id | 1V @ 1μA | |
| Voltage - Breakdown (V(BR)GSS) | 25V | |
| Resistance - RDS(On) | 50Ohm | |
| RoHS Status | ROHS3 Compliant |
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PMBFJ309,215 Documents
Download datasheets and manufacturer documentation for PMBFJ309,215
- PCN PackagingCarrier Tapes 31/Aug/2016 Lighter Reels 02/Jan/2014
- Environmental InformationNXP RoHS3 Cert
- PCN Design/SpecificationResin Hardener 02/Jul/2013
- DatasheetsPMBFJ308,309,310
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