NST4617MX2T5G Tech Specifications

Category Transistors - Bipolar (BJT) - Arrays
Manufacturer ON Semiconductor
Package / Case X2DFN-3
Mfr onsemi
Package Tape & Reel (TR)
Product Status Active
Factory Pack QuantityFactory Pack Quantity 8000
Manufacturer onsemi
Brand onsemi
RoHS Details
Emitter- Base Voltage VEBO 5 V
Pd - Power Dissipation 166 mW
Transistor Polarity NPN
Maximum Operating Temperature + 150 C
DC Collector/Base Gain hfe Min 120
Collector-Emitter Saturation Voltage 80 mV
Minimum Operating Temperature - 55 C
Mounting Styles SMD/SMT
Gain Bandwidth Product fT 112 MHz
Maximum DC Collector Current 100 mA
Collector- Emitter Voltage VCEO Max 50 V
Series *
Packaging MouseReel
Subcategory Transistors
Technology Si
Configuration Single
Product Type BJTs - Bipolar Transistors
Collector Base Voltage (VCBO) 50 V
Product Category Bipolar Transistors - BJT
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NST4617MX2T5G Documents

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