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NST4617MX2T5G Tech Specifications
| Category | Transistors - Bipolar (BJT) - Arrays | |
| Manufacturer | ON Semiconductor | |
| Package / Case | X2DFN-3 | |
| Mfr | onsemi | |
| Package | Tape & Reel (TR) | |
| Product Status | Active | |
| Factory Pack QuantityFactory Pack Quantity | 8000 | |
| Manufacturer | onsemi | |
| Brand | onsemi | |
| RoHS | Details | |
| Emitter- Base Voltage VEBO | 5 V | |
| Pd - Power Dissipation | 166 mW | |
| Transistor Polarity | NPN | |
| Maximum Operating Temperature | + 150 C | |
| DC Collector/Base Gain hfe Min | 120 |
| Collector-Emitter Saturation Voltage | 80 mV | |
| Minimum Operating Temperature | - 55 C | |
| Mounting Styles | SMD/SMT | |
| Gain Bandwidth Product fT | 112 MHz | |
| Maximum DC Collector Current | 100 mA | |
| Collector- Emitter Voltage VCEO Max | 50 V | |
| Series | * | |
| Packaging | MouseReel | |
| Subcategory | Transistors | |
| Technology | Si | |
| Configuration | Single | |
| Product Type | BJTs - Bipolar Transistors | |
| Collector Base Voltage (VCBO) | 50 V | |
| Product Category | Bipolar Transistors - BJT |
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NST4617MX2T5G Documents
Download datasheets and manufacturer documentation for NST4617MX2T5G
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