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- NXH200T120H3Q2F2SG
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NXH200T120H3Q2F2SG Tech Specifications
| Category | Transistors - IGBTs - Modules | |
| Manufacturer | ON Semiconductor | |
| Mounting Type | Chassis Mount | |
| Package / Case | Module | |
| Supplier Device Package | 56-PIM/Q2PACK (93x47) | |
| Mfr | onsemi | |
| Package | Tray | |
| Product Status | Active | |
| Current-Collector (Ic) (Max) | 330 A | |
| Collector-Emitter Saturation Voltage | 1.86 | |
| Factory Pack QuantityFactory Pack Quantity | 12 | |
| Manufacturer | onsemi | |
| Brand | onsemi | |
| Series | - |
| Operating Temperature | -40°C ~ 175°C (TJ) | |
| Configuration | Half Bridge | |
| Power Dissipation | 679 | |
| Power - Max | 679 W | |
| Input | Standard | |
| Current - Collector Cutoff (Max) | 500 μA | |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V | |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 200A | |
| Continuous Collector Current | 330 | |
| IGBT Type | Trench Field Stop | |
| NTC Thermistor | No | |
| Input Capacitance (Cies) @ Vce | 35.615 nF @ 25 V | |
| Product Category | onsemi |
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NXH200T120H3Q2F2SG Documents
Download datasheets and manufacturer documentation for NXH200T120H3Q2F2SG
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