NXH200T120H3Q2F2SG Tech Specifications

Category Transistors - IGBTs - Modules
Manufacturer ON Semiconductor
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package 56-PIM/Q2PACK (93x47)
Mfr onsemi
Package Tray
Product Status Active
Current-Collector (Ic) (Max) 330 A
Collector-Emitter Saturation Voltage 1.86
Factory Pack QuantityFactory Pack Quantity 12
Manufacturer onsemi
Brand onsemi
Series -
Operating Temperature -40°C ~ 175°C (TJ)
Configuration Half Bridge
Power Dissipation 679
Power - Max 679 W
Input Standard
Current - Collector Cutoff (Max) 500 μA
Voltage - Collector Emitter Breakdown (Max) 1200 V
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 200A
Continuous Collector Current 330
IGBT Type Trench Field Stop
NTC Thermistor No
Input Capacitance (Cies) @ Vce 35.615 nF @ 25 V
Product Category onsemi
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NXH200T120H3Q2F2SG Documents

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